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2SK10120 is an N-Channel silicon power MOSFET, It is a Through-hole(THD) active component that consists of three terminals Gate, Drain, and Source. In N-Channel there is the majority of electrons. These electrons moving in the channel is accountable for the flow of current in the transistor.
Applications
Features
Model | 2SK1020 |
Brand | Fuji Electric |
Type | N-Channel MOSFET |
Drain-source voltage (Vdss) | 500V |
Continuous drain current (Id) | 30A |
Pulsed drain current (Id pulse) | 92A |
Continuous reverse drain current (Idr) | 30A |
Gate-source peak voltage (Vgss) | ±30V |
Max. power dissipation (Pd) | 300W |
Operating junction temperature | 150 (degree C) |
Storage temperature range | -55~150 (degree C) |
SKU: #AQ134
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