Skip to product information
1 of 1

ElectronifyIndia

900V 60A GT60M324 N Channel IGBT Transistor TO-3PN Package

900V 60A GT60M324 N Channel IGBT Transistor TO-3PN Package

SKU SKU Code: # 9A51

Regular price
Regular price Sale price
Sale Sold out
Shipping calculated at checkout.

Out of stock

View full details

Description

Its 900V 60A GT60M324 N Channel IGBT Transistor TO-3PN Package. It is a 6th generation of Toshiba's IGBT. It is a enhancement mode type of MOSFET. Its a high speed IGBt with low saturation current. It is mainly used in comsumer applications and can also be used as voltage resonace inverter switch applications.

DATASHEET

Features:

  • FRD included between emitter and collector
  • High Junction temperature : Tj = 175℃ (max)
  • Storage temperature Tstg −40 to 175 °C
  • Low saturation voltage: VCE (sat) =1.70V (typ.) (IC = 60A)
Specifications:
Model  GT60M324
Type  IGBT
Brand Toshiba
Package TO-3PN
Voltage 900V
Current 60A
Power Dissipation 254W