Description
The BSS138 is a versatile N-Channel MOSFET designed for low-voltage and high-speed switching applications, making it ideal for load switches, level shifting, and signal amplification. Housed in a compact SOT-23 package, it features a low gate threshold voltage, fast switching speed, and low on-resistance, ensuring efficient operation in space-constrained designs. The BSS138 is RoHS compliant, offering an eco-friendly solution for modern electronic applications, from battery-powered devices to DC-DC converters.
Key Features:
- Low Gate Threshold Voltage: The BSS138 features a low gate threshold voltage (Vgs(th)), making it suitable for low-voltage applications and enabling it to operate efficiently with minimal control voltage.
- Fast Switching Speed: With its rapid switching characteristics, the BSS138 is perfect for high-speed circuits, ensuring quick transitions with minimal delay.
- Low On-Resistance (Rds(on)): The BSS138 has a low on-resistance, reducing power loss during operation and improving overall circuit efficiency.
- Surface-Mount Package: Available in a compact SOT-23 package, the BSS138 is ideal for high-density PCB designs, conserving valuable board space.
- RoHS Compliant: Manufactured to meet environmental standards, the BSS138 is an eco-friendly choice for modern electronic designs.
Applications:
- Load Switching: Ideal for switching small loads in low-power circuits.
- Level Shifting: Commonly used in circuits where different voltage levels need to be shifted or converted.
- Signal Amplification: Suitable for amplifying small signals in analog circuits.
- DC-DC Converters: Used in low-voltage DC-DC converters to enhance performance and efficiency.
- Battery-Powered Devices: Perfect for portable, battery-operated electronics due to its low voltage operation and minimal power consumption.
Specification
Parameter | Value |
---|---|
Package | SOT-23 |
Type | N-Channel MOSFET |
Drain-Source Voltage (Vds) | 50V |
Continuous Drain Current (Id) | 200mA |
Gate Threshold Voltage (Vgs(th)) | 1V - 3V |
On-Resistance (Rds(on)) | 3.5Ω (Max) at Vgs = 10V |
Total Gate Charge (Qg) | 2.5nC (Typ) |
Power Dissipation (Pd) | 0.36W |
Operating Temperature | -55°C to +150°C |
Gate-Source Voltage (Vgs) | ±20V |
RoHS Compliant | Yes |
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