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G33N50EF Power MOSFET with Fast Body Diode

G33N50EF Power MOSFET with Fast Body Diode

SKU SKU Code: # GG61

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G33N50EF is a power MOSFET with a Fast body diode; It is a Through-hole(THD) active component that consists of three terminals Gate, Drain, and Source. Its fast body diode uses E series technology; its drain-source voltage is 650V.


  •  Telecommunications - Server and telecom power supplies 
  • Lighting - High-intensity discharge (HID) - Light emitting diodes (LEDs) 
  • Consumer and computing - ATX power supplies 
  • Industrial - Welding - Battery chargers
  • Renewable energy - Solar (PV inverters)
  • Switch mode power suppliers (SMPS)
  • Applications using the following topologies - LLC - Phase shifted bridge (ZVS) - 3-level inverter - AC/DC bridge


  • High-speed switching Low input capacitance (Ciss)
  • Low on-resistance
  • No secondary breakdown
  • Low driving power
  • Reduced switching and conduction losses
  • Avalanche energy rated (UIS)
Model G33N50EF 
Package TO-247AC
Continuous drain current (Id) 21A
Pulsed drain current (Id pulse) 100A
Drain-Source Breakdown Voltage 600V
Max. power dissipation (Pd) 278W
Storage temperature range -55~150 (degree C)