K120T60 IGBT Transistor 600V, 120A

Description

K120T60 is an Insulated Gate Bipolar Transistor. It is a Three-terminal semiconductor switching device that can be used for fast switching with high efficiency in many types of electronic devices. These devices are mostly used in amplifiers for switching/processing complex wave patterns with pulse width modulation (PWM). An IGBT is a fusion between a BJT and MOSFET. The symbol of the IGBT also represents the same, as you can see the input side represents a MOSFET with a Gate terminal and the output side represents a BJT with Collector and Emitter. The Collector and the Emitter are the conduction terminals and the gate is the control terminal with which the switching operation is controlled.

Features

• Very low VCE(sat )1.5V(typ.)
• Maximum junction temperature 175°C 
• Short circuit withstand time 5µs
• Very tight parameter distribution
• High ruggedness,temperature stable behavior
• High switching speed
• Positive temperature coefficient in VCE(sat)
• Low EMI
• Low gate charge QG
• Increased current capability
• Very soft,fast recovery Anti-Parallel Emitter Controlled HE diode

Applications

• General Purpose Inverters
• Uninterruptible Power Supplies
• Motordrivers
• Medium To Low Switching Frequency Power Converters

Specifications