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Industrial Components

K120T60 IGBT Transistor 600V, 120A (Pack of 100)

K120T60 IGBT Transistor 600V, 120A (Pack of 100)

Regular price Rs. 30,712.00
Regular price Sale price Rs. 30,712.00

K120T60 is an Insulated Gate Bipolar Transistor. It is a Three-terminal semiconductor switching device that can be used for fast switching with high efficiency in many types of electronic devices. These devices are mostly used...


SKU: KK256
Vendor: ElectronifyIndia

Availability: Low stock


delivery-truck Estimated Delivery Date : 8 - 12 December, 2024

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Description

K120T60 is an Insulated Gate Bipolar Transistor. It is a Three-terminal semiconductor switching device that can be used for fast switching with high efficiency in many types of electronic devices. These devices are mostly used in amplifiers for switching/processing complex wave patterns with pulse width modulation (PWM). An IGBT is a fusion between a BJT and MOSFET. The symbol of the IGBT also represents the same, as you can see the input side represents a MOSFET with a Gate terminal and the output side represents a BJT with Collector and Emitter. The Collector and the Emitter are the conduction terminals and the gate is the control terminal with which the switching operation is controlled.

Features

  • Very low VCE(sat )1.5V(typ.)
  • Maximum junction temperature 175°C 
  • Short circuit withstand time 5µs
  • Very tight parameter distribution
  • High ruggedness, temperature stable behavior
  • High switching speed
  • Positive temperature coefficient in VCE(sat)
  • Low EMI
  • Low gate charge QG
  • Increased current capability
  • Very soft, fast recovery Anti-Parallel Emitter Controlled HE diode

Applications

  • General Purpose Inverters
  • Uninterruptible Power Supplies
  • Motor drivers
  • Medium To Low Switching Frequency Power Converters
Specifications 
Model  K120T60
Type IGBT Transistor
Package Type TO247
Collector-emitter voltage 600 V
Dc collector current 160 A @ 25°C
Diode forward current 160 A
Gate-emitter voltage ±20 V
Power Dissipation Tc=25°C 833.0 W
Gate-emitter leakage current  100 nA
DC collector current 120.0A
Quantity 100